Substitutional doping from foreign elements stands out as a preferred method for precisely tailoring the electronic band structure, conduction type, and carrier concentration of pristine materials. In the realm of three-dimensional (3D) monocrystalline silicon, for instance, the introduction of boron (B) and nitrogen (N) atoms as acceptor and donor dopants, respectively, has proven highly effective in enhancing carrier mobility. This improvement positions silicon for advanced applications in integrated circuits.