Direct band gap GeSn alloys have emerged as a promising group-IV gain material for low-cost infrared laser manufacturing. They face major issues like high threshold power, and low lasing temperature that hinder their integration into full CMOS-compatible photonic chips. Scientists in France have developed a specific GeSn-on-insulator (GeSnOI) technology that combines defects, strain, electronic-band, modal, and thermal engineering all together. They show a GeSn laser on a versatile photonic platform with improved performances.