Discovery of non-toxic semiconductors with a direct band gap in the near-infrared
Published Date: 3/23/2021
Source: phys.org
NIMS and the Tokyo Institute of Technology have jointly discovered that the chemical compound Ca3SiO is a direct transition semiconductor, making it a potentially promising infrared LED and infrared detector component. This compound—composed of calcium, silicon and oxygen—is cheap to produce and non-toxic. Many of the existing infrared semiconductors contain toxic chemical elements, such as cadmium and tellurium. Ca3SiO may be used to develop less expensive and safer near-infrared semiconductors.