Germanium telluride (GeTe) is known as a ferrolectric Rashba semiconductor with a number of interesting properties. The crystals consist of nanodomains, whose ferrolectric polarization can be switched by external electric fields. Because of the so-called Rashba effect, this ferroelectricity can also be used to switch electron spins within each domain. Germanium telluride is therefore an interesting material for spintronic devices, which allow data processing with significantly less energy input.