Magnetoresistive random access memory (MRAM) is the top candidate for next-generation digital technology. However, manipulating MRAM efficiently and effectively is challenging. An interdisciplinary research team based at National Tsing Hua University (NTHU) in Taiwan, led by Prof. Chih-Huang Lai, Department of Materials Science and Engineering, and Prof. Hsiu-Hau Lin, Department of Physics has now achieved a breakthrough. By adding a layer of platinum only a few nanometers thick, their device generates spin current to switch the pinned magnetic moments at will—a task that has never been accomplished before. For faster reading and writing, reduced power consumption and retaining data through a power outage, MRAM is particularly promising.