Researchers at the National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) that adopts an all-ion-implanted process for both n-type and p-type doping, paving the way for new generations of low-cost and highly manufacturable Ga2O3 power electronic devices.